Category:
Power MOSFET
Dimensions:
10.29 x 4.63 x 11.05mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.63mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
190 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
51 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1630 pF @ 25 V
Length:
10.29mm
Pin Count:
3
Typical Turn-Off Delay Time:
146 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
154 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
11.05mm
Typical Turn-On Delay Time:
32 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
