Diodes Inc ZXMN10A25GTA N-channel MOSFET, 4 A, 100 V, 3+Tab-Pin SOT-223

ZXMN10A25GTA Diodes Inc  N-channel MOSFET, 4 A, 100 V, 3+Tab-Pin SOT-223
DiodesZetex

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.8mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
125 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 4 A 100 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZXMN10A25GTA. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 1.8mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 125 mω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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MOSFET N-ch 4A 100V SOT223(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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