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Microchip DN3765K4-G N-channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK

DN3765K4-G Microchip  N-channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK
DN3765K4-G
Microchip

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
2.39mm
Width:
6.73mm
Length:
6.2mm
Maximum Drain Source Resistance:
8 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 300 mA 650 V Depletion 3-Pin DPAK manufactured by Microchip. The manufacturer part number is DN3765K4-G. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 2.39mm. Furthermore, the product is 6.73mm wide. Its accurate length is 6.2mm. It provides up to 8 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)

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