Microchip DN3535N8-G N-channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA

DN3535N8-G Microchip  N-channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA
Microchip

Product Information

Maximum Drain Source Voltage:
350 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1.6mm
Width:
2.6mm
Length:
4.6mm
Maximum Drain Source Resistance:
10 Ω
Package Type:
TO-243AA
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
230 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 230 mA 350 V Depletion 4-Pin TO-243AA manufactured by Microchip. The manufacturer part number is DN3535N8-G. It has a maximum of 350 v drain source voltage. The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 2.6mm wide. Its accurate length is 4.6mm. It provides up to 10 ω maximum drain source resistance. The package is a sort of to-243aa. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 230 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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