Diodes Inc ZVP2120GTA P-channel MOSFET, 200 mA, 200 V, 3+Tab-Pin SOT-223

ZVP2120GTA Diodes Inc  P-channel MOSFET, 200 mA, 200 V, 3+Tab-Pin SOT-223
DiodesZetex

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1.65mm
Width:
3.55mm
Length:
6.55mm
Maximum Drain Source Resistance:
25 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 200 mA 200 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZVP2120GTA. It has a maximum of 200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.55mm wide. Its accurate length is 6.55mm. It provides up to 25 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration.

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SOT223 P-Channel Enhancement Mode Vertical Dmos Fet Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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