Diodes Inc DMP56D0UV-7 Dual P-channel MOSFET, 160 mA, 50 V, 6-Pin SOT-563

DiodesZetex

Product Information

Maximum Drain Source Voltage:
50 V
Typical Gate Charge @ Vgs:
0.58 nC @ 4 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.6mm
Width:
1.25mm
Length:
1.7mm
Maximum Drain Source Resistance:
8 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
160 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Diodes Inc Dual P-channel MOSFET 160 mA 50 V 6-Pin SOT-563 manufactured by DiodesZetex. The manufacturer part number is DMP56D0UV-7. It has a maximum of 50 v drain source voltage. With a typical gate charge at Vgs includes 0.58 nc @ 4 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 1.25mm wide. Its accurate length is 1.7mm. It provides up to 8 ω maximum drain source resistance. The package is a sort of sot-563. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 160 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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DMP56D0UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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