Diodes Inc DMP56D0UFB-7 P-channel MOSFET, 200 mA, 50 V, 3-Pin X1-DFN1006

DMP56D0UFB-7 Diodes Inc  P-channel MOSFET, 200 mA, 50 V, 3-Pin X1-DFN1006
DiodesZetex

Product Information

Maximum Drain Source Voltage:
50 V
Typical Gate Charge @ Vgs:
0.58 nC @ 4 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
425 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.48mm
Width:
0.675mm
Length:
1.08mm
Maximum Drain Source Resistance:
8 Ω
Package Type:
X1-DFN1006
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 200 mA 50 V 3-Pin X1-DFN1006 manufactured by DiodesZetex. The manufacturer part number is DMP56D0UFB-7. It has a maximum of 50 v drain source voltage. With a typical gate charge at Vgs includes 0.58 nc @ 4 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 425 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.48mm. Furthermore, the product is 0.675mm wide. Its accurate length is 1.08mm. It provides up to 8 ω maximum drain source resistance. The package is a sort of x1-dfn1006. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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DMP56D0UFB P-CHANNEL ENHANCEMENT MODE MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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