Diodes Inc DMN63D8LDW-7 Dual N-channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363

DMN63D8LDW-7 Diodes Inc  Dual N-channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363
DiodesZetex

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
0.87 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
13 Ω
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
260 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Diodes Inc Dual N-channel MOSFET 260 mA 30 V 6-Pin SOT-363 manufactured by DiodesZetex. The manufacturer part number is DMN63D8LDW-7. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 0.87 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 13 ω maximum drain source resistance. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 260 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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DMN63D8LDW-7 Dual N-Channel Enhancement Mode MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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