Diodes Inc DMG9N65CTI N-channel MOSFET, 9 A, 650 V, 3-Pin ITO-220AB

DMG9N65CTI Diodes Inc  N-channel MOSFET, 9 A, 650 V, 3-Pin ITO-220AB
DiodesZetex

Product Information

Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
39 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
13 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
5V
Height:
16.07mm
Width:
4.9mm
Length:
16.07mm
Maximum Drain Source Resistance:
1.3 Ω
Package Type:
ITO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 9 A 650 V 3-Pin ITO-220AB manufactured by DiodesZetex. The manufacturer part number is DMG9N65CTI. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 39 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 13 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 16.07mm. Furthermore, the product is 4.9mm wide. Its accurate length is 16.07mm. It provides up to 1.3 ω maximum drain source resistance. The package is a sort of ito-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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DMG4N65CTI N-channel Enhancement Mode MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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