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This is N-channel MOSFET 6.2 A 600 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK6A60W,S4VX(M. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 750 mω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 6.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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