Toshiba TK20E60W,S1VX(S N-channel MOSFET, 20 A, 600 V TK, 3-Pin TO-220

TK20E60W-S1VX-S Toshiba TK20E60W,S1VX(S N-channel MOSFET, 20 A, 600 V TK, 3-Pin TO-220
TK20E60W,S1VX(S
Toshiba

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Maximum Drain Source Resistance:
155 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
N
Length:
10.16mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
165 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.1mm
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 20 A 600 V TK 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK20E60W,S1VX(S. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.45mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. It provides up to 155 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.16mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 165 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.1mm.

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TK20E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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