Toshiba TK100A06N1,S4X(S N-channel MOSFET, 100 A, 60 V TK, 3-Pin TO-220SIS

TK100A06N1-S4X-S Toshiba TK100A06N1,S4X(S N-channel MOSFET, 100 A, 60 V TK, 3-Pin TO-220SIS
TK100A06N1,S4X(S
Toshiba

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
140 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Series:
TK
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
15mm
Width:
4.5mm
Length:
10mm
Maximum Drain Source Resistance:
2.7 mΩ
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 100 A 60 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK100A06N1,S4X(S. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 140 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 45 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 2.7 mω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TK100A06N1, MOSFET Silicon N-Channel MOS (U-MOS VIII-H)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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