Category:
Power MOSFET
Dimensions:
3.04 x 1.4 x 1.02mm
Maximum Continuous Drain Current:
1.2 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
250 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
85 pF @ 25 V
Length:
3.04mm
Pin Count:
3
Typical Turn-Off Delay Time:
9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
540 mW
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.02mm
Typical Turn-On Delay Time:
3.9 ns
Minimum Operating Temperature:
-55 °C
