Enjoy 10% savings with code 'SAVE10' when you spend £50 or more! Available online only—enter the code at checkout!

Infineon IRFH7107TRPBF N-channel MOSFET, 75 A, 75 V HEXFET, 8-Pin PQFN

IRFH7107TRPBF Infineon  N-channel MOSFET, 75 A, 75 V HEXFET, 8-Pin PQFN
Infineon

Product Information

Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
N
Length:
5.85mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
104 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.17mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
8.5 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 75 A 75 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFH7107TRPBF. While 75 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of pqfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.85mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 104 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.17mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 8.5 mω maximum drain source resistance.

pdf icon
IRFH7107PbF, HEXFET Power MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search IRFH7107TRPBF on website for other similar products.
We accept all major payment methods for all products including ET13987756. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRFH7107TRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRFH7107TRPBF N-channel MOSFET, 75 A, 75 V HEXFET, 8-Pin PQFN. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFH7107TRPBF N-channel MOSFET, 75 A, 75 V HEXFET, 8-Pin PQFN.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987756 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987756.
Yes. We ship IRFH7107TRPBF Internationally to many countries around the world.