Infineon IRF3808PBF N-channel MOSFET, 140 A, 75 V HEXFET, 3-Pin TO-220AB

IRF3808PBF Infineon  N-channel MOSFET, 140 A, 75 V HEXFET, 3-Pin TO-220AB
Infineon

Product Information

Maximum Drain Source Voltage:
75 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Package Type:
TO-220AB
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
140 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is N-channel MOSFET 140 A 75 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRF3808PBF. It has a maximum of 75 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to-220ab. It consists of 2 elements per chip. While 140 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - IRF3808PBF(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRF3808PBF N-channel MOSFET, 140 A, 75 V HEXFET, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF3808PBF N-channel MOSFET, 140 A, 75 V HEXFET, 3-Pin TO-220AB.
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