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This is N-channel MOSFET 660 mA 200 V SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP297H6327XTSA1. While 660 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.5mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 1.8v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.8 ω maximum drain source resistance.
For more information please check the datasheets.
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