Infineon BSD816SNH6327XTSA1 N-channel MOSFET, 1.4 A, 20 V OptiMOS 2, 6-Pin SOT-363

BSD816SNH6327XTSA1 Infineon  N-channel MOSFET, 1.4 A, 20 V OptiMOS 2, 6-Pin SOT-363
Infineon

Product Information

Maximum Continuous Drain Current:
1.4 A
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.95V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.6 nC @ 2.5 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS 2
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
240 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 1.4 A 20 V OptiMOS 2 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is BSD816SNH6327XTSA1. While 1.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.95v of maximum gate threshold voltage. The package is a sort of sot-363 (sc-88). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.6 nc @ 2.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 240 mω maximum drain source resistance.

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BSD816SN N-channel MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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