Vishay SI5419DU-T1-GE3 P-channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET

SI5419DU-T1-GE3 Vishay  P-channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
31 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Width:
1.98mm
Length:
3.08mm
Minimum Gate Threshold Voltage:
1.2V
Package Type:
PowerPAK ChipFET
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9.9 A
Transistor Material:
Si
Maximum Drain Source Resistance:
33 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 9.9 A 30 V 8-Pin PowerPAK ChipFET manufactured by Vishay. The manufacturer part number is SI5419DU-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 31 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Furthermore, the product is 1.98mm wide. Its accurate length is 3.08mm. Whereas its minimum gate threshold voltage includes 1.2v. The package is a sort of powerpak chipfet. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 33 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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Si5419DU, P-Channel 30V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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