Category:
Power MOSFET
Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
700 mA
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
8 V
Maximum Drain Source Resistance:
650 mΩ
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
112 pF @ -4 V
Length:
2.2mm
Pin Count:
3
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-50 °C
