Vishay IRL640SPBF N-channel MOSFET, 17 A, 200 V, 3-Pin D2PAK

IRL640SPBF Vishay  N-channel MOSFET, 17 A, 200 V, 3-Pin D2PAK
IRL640SPBF
Vishay

Product Information

Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
66 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
4.83mm
Width:
9.65mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 17 A 200 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is IRL640SPBF. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 66 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.1 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 180 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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IRL640SPBF Data Sheet(Technical Reference)

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