Category:
Power MOSFET
Dimensions:
10.63 x 4.83 x 16.12mm
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Drain Source Resistance:
35 Ω
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
78 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1200 pF @ -25 V
Length:
10.63mm
Pin Count:
3
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.12mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
