Category:
Power MOSFET
Dimensions:
5 x 6.29 x 3.37mm
Maximum Continuous Drain Current:
2.4 A
Transistor Material:
Si
Width:
6.29mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Package Type:
HVMDIP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
400 pF @ 25 V
Length:
5mm
Pin Count:
4
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
3.37mm
Typical Turn-On Delay Time:
8.7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
100 mΩ
