Category:
Power MOSFET
Dimensions:
10.4 x 9.2 x 4.7mm
Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SC-83
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4500 pF @ 25 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
120 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.7mm
Typical Turn-On Delay Time:
50 ns
Maximum Drain Source Resistance:
230 mΩ
