Toshiba TK16E60W,S1VX(S N-channel MOSFET, 15.8 A, 600 V TK, 3-Pin TO-220

TK16E60W-S1VX-S Toshiba TK16E60W,S1VX(S N-channel MOSFET, 15.8 A, 600 V TK, 3-Pin TO-220
TK16E60W,S1VX(S
Toshiba

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
130 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
15.1mm
Width:
4.45mm
Length:
10.16mm
Maximum Drain Source Resistance:
190 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
15.8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 15.8 A 600 V TK 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK16E60W,S1VX(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 38 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 15.1mm. Furthermore, the product is 4.45mm wide. Its accurate length is 10.16mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 15.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TK16E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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