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Infineon IPU50R1K4CEBKMA1 N-channel MOSFET, 3.1 A, 550 V CoolMOS CE, 3-Pin TO-251

IPU50R1K4CEBKMA1 Infineon  N-channel MOSFET, 3.1 A, 550 V CoolMOS CE, 3-Pin TO-251
Infineon

Product Information

Maximum Continuous Drain Current:
3.1 A
Transistor Material:
Si
Width:
2.41mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.2 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.22mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.4 Ω
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 3.1 A 550 V CoolMOS CE 3-Pin TO-251 manufactured by Infineon. The manufacturer part number is IPU50R1K4CEBKMA1. While 3.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.41mm wide. The product offers single transistor configuration. It has a maximum of 550 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 25 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.4 ω maximum drain source resistance.

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CoolMOS™ CE 500V CoolMOS ™ Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Infineon IPU50R1K4CEBKMA1 N-channel MOSFET, 3.1 A, 550 V CoolMOS CE, 3-Pin TO-251. You can also check on our website or by contacting our customer support team for further order details on Infineon IPU50R1K4CEBKMA1 N-channel MOSFET, 3.1 A, 550 V CoolMOS CE, 3-Pin TO-251.
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Yes. We ship IPU50R1K4CEBKMA1 Internationally to many countries around the world.