Diodes Inc DMN55D0UT-7 N-channel MOSFET, 160 mA, 50 V, 3-Pin SOT-523

DMN55D0UT-7 Diodes Inc  N-channel MOSFET, 160 mA, 50 V, 3-Pin SOT-523
DiodesZetex

Product Information

Maximum Drain Source Voltage:
50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1V
Height:
0.8mm
Width:
0.85mm
Length:
1.7mm
Maximum Drain Source Resistance:
5 Ω
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
160 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 160 mA 50 V 3-Pin SOT-523 manufactured by DiodesZetex. The manufacturer part number is DMN55D0UT-7. It has a maximum of 50 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 0.85mm wide. Its accurate length is 1.7mm. It provides up to 5 ω maximum drain source resistance. The package is a sort of sot-523 (sc-89). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 160 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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DMN55D0UT-7 N-Channel Enhancement Mode MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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