Diodes Inc DMN10H099SK3-13 N-channel MOSFET, 17 A, 100 V, 3-Pin DPAK

DMN10H099SK3-13 Diodes Inc  N-channel MOSFET, 17 A, 100 V, 3-Pin DPAK
DMN10H099SK3-13
DiodesZetex

Product Information

Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Width:
6.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
25.2 nC @ 10 V
Channel Type:
N
Length:
6.2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
34 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.77V
Maximum Drain Source Resistance:
99 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 17 A 100 V 3-Pin DPAK manufactured by DiodesZetex. The manufacturer part number is DMN10H099SK3-13. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 25.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.2mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 34 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.77v . It provides up to 99 mω maximum drain source resistance.

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DMN10H099SK3, 100V N-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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