Diodes Inc DMN1019USN-7 N-channel MOSFET, 11 A, 12 V, 3-Pin SOT-346

DMN1019USN-7 Diodes Inc  N-channel MOSFET, 11 A, 12 V, 3-Pin SOT-346
DiodesZetex

Product Information

Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
0.8V
Package Type:
SOT-346
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
50.6 nC @ 8 V
Channel Type:
N
Length:
3.1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.2 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
41 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 11 A 12 V 3-Pin SOT-346 manufactured by DiodesZetex. The manufacturer part number is DMN1019USN-7. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 12 v drain source voltage. The product carries 0.8v of maximum gate threshold voltage. The package is a sort of sot-346. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 50.6 nc @ 8 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.2 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 41 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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DMN1019USN, 12V N-Channel Enhancement Mode MOSFET(Technical Reference)

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