Diodes Inc DMG4435SSS-13 P-channel MOSFET, 10 A, 30 V, 8-Pin SOIC

DMG4435SSS-13 Diodes Inc  P-channel MOSFET, 10 A, 30 V, 8-Pin SOIC
DMG4435SSS-13
DiodesZetex

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
35.4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-25 V, +25 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.5mm
Width:
3.95mm
Length:
4.95mm
Maximum Drain Source Resistance:
29 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 10 A 30 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is DMG4435SSS-13. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 35.4 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of -25 v, +25 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 3.95mm wide. Its accurate length is 4.95mm. It provides up to 29 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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