Toshiba TK8A60W,S5VX(J N-channel MOSFET, 8 A, 600 V TK, 3-Pin TO-220SIS

TK8A60W-S5VX-J Toshiba TK8A60W,S5VX(J N-channel MOSFET, 8 A, 600 V TK, 3-Pin TO-220SIS
TK8A60W,S5VX(J
Toshiba

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
18.5 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
30 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
15mm
Width:
4.5mm
Length:
10mm
Maximum Drain Source Resistance:
500 mΩ
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 8 A 600 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK8A60W,S5VX(J. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 18.5 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 500 mω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TK8A60W, Silicon N-Channel DTMOS MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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