Toshiba 2SJ668(TE16L,NQ) P-channel MOSFET, 5 A, 60 V, 3-Pin PW Mold

2SJ668-TE16L-NQ- Toshiba 2SJ668(TE16L,NQ) P-channel MOSFET, 5 A, 60 V, 3-Pin PW Mold
2SJ668(TE16L,NQ)
Toshiba

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
20 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
2.3mm
Width:
5.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
170 mΩ
Package Type:
PW Mold
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 5 A 60 V 3-Pin PW Mold manufactured by Toshiba. The manufacturer part number is 2SJ668(TE16L,NQ). It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 20 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 5.5mm wide. Its accurate length is 6.5mm. It provides up to 170 mω maximum drain source resistance. The package is a sort of pw mold. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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