Dimensions:
10.67 x 15.01 x 4.83mm
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Width:
15.01mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4.9V
Maximum Drain Source Resistance:
105 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1200 pF @ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
100 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
7.8 ns
Minimum Operating Temperature:
-55 °C
