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Infineon IRF7351PBF Dual N-channel MOSFET, 8 A, 60 V HEXFET, 8-Pin SOIC

IRF7351TRPBF Infineon IRF7351PBF Dual N-channel MOSFET, 8 A, 60 V HEXFET, 8-Pin SOIC
IRF7351TRPBF
Infineon

Product Information

Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
17.8 mΩ
RoHs Compliant
Checking for live stock

This is IRF7351PBF Dual N-channel MOSFET 8 A 60 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7351TRPBF. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 24 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 17.8 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
pdf icon
IRF7351PbF Dual N-channel HEXFET Power MOSFET(Technical Reference)

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FAQs

Yes. You can also search IRF7351TRPBF on website for other similar products.
We accept all major payment methods for all products including ET13933205. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRF7351TRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF7351PBF Dual N-channel MOSFET, 8 A, 60 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7351PBF Dual N-channel MOSFET, 8 A, 60 V HEXFET, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13933205 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13933205.
Yes. We ship IRF7351TRPBF Internationally to many countries around the world.
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