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This is N-channel MOSFET 18 A 200 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRF640NPBF. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 67 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 8.77mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 150 mω maximum drain source resistance.
For more information please check the datasheets.
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