Category:
Power MOSFET
Dimensions:
10.67 x 11.3 x 4.83mm
Maximum Continuous Drain Current:
73 A
Transistor Material:
Si
Width:
11.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
14 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3550 pF@ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
53 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
190 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
