Category:
Power MOSFET
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
66 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3300 pF@ 25 V
Pin Count:
3
Typical Turn-Off Delay Time:
42 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Maximum Gate Source Voltage:
-10 V, +10 V
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
39 mΩ
