Vishay SIHG20N50E-GE3 N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC

SIHG20N50E-GE3 Vishay  N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC
SIHG20N50E-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
179 W
Series:
E Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
180 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 19 A 500 V E Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SIHG20N50E-GE3. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 179 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 180 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Vishay SIHG20N50E-GE3 N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC. You can also check on our website or by contacting our customer support team for further order details on Vishay SIHG20N50E-GE3 N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC.
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