Vishay SI7615ADN-T1-GE3 P-channel MOSFET, 35 A, 20 V, 8-Pin PowerPAK 1212

SI7615ADN-T1-GE3 Vishay  P-channel MOSFET, 35 A, 20 V, 8-Pin PowerPAK 1212
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
122 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.12mm
Width:
3.4mm
Length:
3.4mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Maximum Drain Source Resistance:
9.8 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 35 A 20 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SI7615ADN-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 122 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 52 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.12mm. Furthermore, the product is 3.4mm wide. Its accurate length is 3.4mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 9.8 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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Si7615ADN, P-Channel 20V (Drain-Source) MOSFET Data Sheet(Technical Reference)

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