Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
20.5 nC @ 10 V, 41.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.1 W, 3.2 W
Maximum Gate Source Voltage:
-20 V, -16 V, +16 V, +20 V
Height:
1.55mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7.2 A, 8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
20 mΩ, 28 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
