Vishay Si2338DS-T1-GE3 N-channel MOSFET, 6 A, 30 V, 3-Pin SOT-23

Si2338DS-T1-GE3 Vishay  N-channel MOSFET, 6 A, 30 V, 3-Pin SOT-23
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
8.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.02mm
Width:
1.4mm
Length:
3.04mm
Minimum Gate Threshold Voltage:
1.2V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
33 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 6 A 30 V 3-Pin SOT-23 manufactured by Vishay. The manufacturer part number is Si2338DS-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 8.2 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.02mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. Whereas its minimum gate threshold voltage includes 1.2v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 33 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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Si2338DS, N-Channel 30V (D-S) MOSFET(Technical Reference)

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