Name: SI2308BDS-T1-E3, Vishay
Brand: Vishay
SKU: ET13923019
Price: 0.14 GBP
Availability: InStock

SI2308BDS-T1-E3 Vishay SI2308BDS-T1-GE3 N-channel MOSFET, 2.3 A, 60 V, 3-Pin TO-236

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Product Information

Maximum Drain Source Voltage:

60 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

TrenchFET

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.192 O

Package Type:

SOT-23

Number of Elements per Chip:

Maximum Continuous Drain Current:

2.1 A

Pin Count:

Checking for live stock

This is SI2308BDS-T1-GE3 N-channel MOSFET 2.3 A 60 V 3-Pin TO-236 manufactured by Vishay. The manufacturer part number is SI2308BDS-T1-E3. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3v of maximum gate threshold voltage. It provides up to 0.192 o maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. While 2.1 a of maximum continuous drain current. It contains 3 pins.

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Vishay SI2308BDS-T1-GE3 N-channel MOSFET, 2.3 A, 60 V, 3-Pin TO-236

SI2308BDS-T1-E3

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