Vishay SI2308BDS-T1-GE3 N-channel MOSFET, 2.3 A, 60 V, 3-Pin TO-236

SI2308BDS-T1-E3 Vishay SI2308BDS-T1-GE3 N-channel MOSFET, 2.3 A, 60 V, 3-Pin TO-236

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Product Information

Maximum Drain Source Voltage:

60 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

TrenchFET

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.192 O

Package Type:

SOT-23

Number of Elements per Chip:

Maximum Continuous Drain Current:

2.1 A

Pin Count:

Checking for live stock

This is SI2308BDS-T1-GE3 N-channel MOSFET 2.3 A 60 V 3-Pin TO-236 manufactured by Vishay. The manufacturer part number is SI2308BDS-T1-E3. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3v of maximum gate threshold voltage. It provides up to 0.192 o maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. While 2.1 a of maximum continuous drain current. It contains 3 pins.

Datasheet(Technical Reference)

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You can order Vishay brand products with SI2308BDS-T1-E3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of Vishay SI2308BDS-T1-GE3 N-channel MOSFET, 2.3 A, 60 V, 3-Pin TO-236. You can also check on our website or by contacting our customer support team for further order details on Vishay SI2308BDS-T1-GE3 N-channel MOSFET, 2.3 A, 60 V, 3-Pin TO-236.

We use our internationally recognized delivery partners UPS/DHL. Collection of ET13923019 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13923019.

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SI2308BDS-T1-E3

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