Vishay SI1302DL-T1-E3 N-channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323

SI1302DL-T1-E3 Vishay  N-channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323
SI1302DL-T1-E3
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
0.86 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
480 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 600 mA 30 V 3-Pin SOT-323 manufactured by Vishay. The manufacturer part number is SI1302DL-T1-E3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 0.86 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 280 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 600 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 480 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Si1302DL N-Channel 30-V (D-S) MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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