Diodes Inc DMN30H14DLY-13 N-channel MOSFET, 210 mA, 300 V, 3-Pin SOT-89

DMN30H14DLY-13 Diodes Inc  N-channel MOSFET, 210 mA, 300 V, 3-Pin SOT-89
DiodesZetex

Product Information

Maximum Continuous Drain Current:
210 mA
Transistor Material:
Si
Width:
2.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
300 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOT-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4 nC @ 10 V
Channel Type:
N
Length:
4.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
20 Ω
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 210 mA 300 V 3-Pin SOT-89 manufactured by DiodesZetex. The manufacturer part number is DMN30H14DLY-13. While 210 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.6mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of sot-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 20 ω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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DMN30H14DLY, N-Channel Enhancement Mode MOSFET(Technical Reference)

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