Diodes Inc DMG6402LVT-7 N-channel MOSFET, 7.5 A, 30 V, 6-Pin TSOT-26

DMG6402LVT-7 Diodes Inc  N-channel MOSFET, 7.5 A, 30 V, 6-Pin TSOT-26
DiodesZetex

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
11.4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.75 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
42 mΩ
Package Type:
TSOT-26
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 7.5 A 30 V 6-Pin TSOT-26 manufactured by DiodesZetex. The manufacturer part number is DMG6402LVT-7. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 11.4 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.75 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 42 mω maximum drain source resistance. The package is a sort of tsot-26. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 7.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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