Category:
Power MOSFET
Dimensions:
15.9 x 5.03 x 20.95mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
5.03mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
73 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2200 pF @ 10 V
Length:
15.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
136 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
220 W
Series:
Super J-MOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.95mm
Typical Turn-On Delay Time:
57 ns
Maximum Drain Source Resistance:
125 mΩ
