Fuji Electric FMW47N60S1HF N-channel MOSFET, 47 A, 600 V Super J-MOS, 3-Pin TO-247

FMW47N60S1HF Fuji Electric  N-channel MOSFET, 47 A, 600 V Super J-MOS, 3-Pin TO-247
FMW47N60S1HF
Fuji Electric

Product Information

Maximum Continuous Drain Current:
47 A
Transistor Material:
Si
Width:
5.03mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
70 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
125 nC @ 10 V
Channel Type:
N
Length:
15.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
390 W
Series:
Super J-MOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.95mm
RoHs Compliant
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This is N-channel MOSFET 47 A 600 V Super J-MOS 3-Pin TO-247 manufactured by Fuji Electric. The manufacturer part number is FMW47N60S1HF. While 47 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.03mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. It provides up to 70 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 125 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 390 w maximum power dissipation. The product super j-mos, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.95mm.

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FMW47N60S1HF, N-Channel Enhancement Mode Power MOSFET (Super J-MOS Series) 600V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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