Vishay IRFD9020PBF P-channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP

IRFD9020PBF Vishay  P-channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP
Vishay

Product Information

Maximum Continuous Drain Current:
1.6 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
HVMDIP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
P
Length:
6.29mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
3.37mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
6.3V
Maximum Drain Source Resistance:
280 mΩ
RoHs Compliant
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This is P-channel MOSFET 1.6 A 60 V 4-Pin HVMDIP manufactured by Vishay. The manufacturer part number is IRFD9020PBF. While 1.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of hvmdip. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.29mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 3.37mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 6.3v . It provides up to 280 mω maximum drain source resistance.

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IRFD9020, SiHFD9020, Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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