Vishay IRFI630GPBF N-channel MOSFET, 5.9 A, 200 V, 3-Pin TO-220FP

IRFI630GPBF Vishay  N-channel MOSFET, 5.9 A, 200 V, 3-Pin TO-220FP
IRFI630GPBF
Vishay

Product Information

Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
43 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Minimum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
400 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.9 A
Transistor Material:
Si
Height:
9.8mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 5.9 A 200 V 3-Pin TO-220FP manufactured by Vishay. The manufacturer part number is IRFI630GPBF. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 43 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 35 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 2v. It provides up to 400 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 9.8mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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IRFI630GPBF Data Sheet(Technical Reference)

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