Vishay SQJ960EP-T1_GE3 Dual N-channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO

SQJ960EP-T1_GE3 Vishay  Dual N-channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO
Vishay

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
34 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.14mm
Width:
4.47mm
Length:
5.25mm
Minimum Gate Threshold Voltage:
1.5V
Package Type:
PowerPAK SO
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
84 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual N-channel MOSFET 8 A 60 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SQJ960EP-T1_GE3. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 34 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.14mm. Furthermore, the product is 4.47mm wide. Its accurate length is 5.25mm. Whereas its minimum gate threshold voltage includes 1.5v. The package is a sort of powerpak so. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 84 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers isolated transistor configuration.

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SQJ960EP, Automotive Dual N-Channel 60V (Drain-Source) 175degC MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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