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This is Dual N-channel MOSFET 8 A 60 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SQJ960EP-T1_GE3. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 34 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.14mm. Furthermore, the product is 4.47mm wide. Its accurate length is 5.25mm. Whereas its minimum gate threshold voltage includes 1.5v. The package is a sort of powerpak so. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 84 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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