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This is N-channel MOSFET 630 mA 20 V 3-Pin SOT-416 manufactured by Vishay. The manufacturer part number is SI1012CR-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.3 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 240 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.8mm. Furthermore, the product is 0.86mm wide. Its accurate length is 1.68mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of sc-75. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 630 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.1 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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